Monocrystallion Silicon Cell(4BB)
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Mechanical Data And Design
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Format
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156.75mm x 156.75mm ±0.5mm
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Thickness（wafer）
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200μm±20μm
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Front（-）
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1.0mm bus bars(silver),blue anti-reflection coating(silicon nitride)
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Back（+）
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2.0mm wide soldering pads(silver)back surface field(aluminium)
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Temperature Coefficients
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TkVotlage
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-0.33%/K
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TkCurrent
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+0.048%/K
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TkPower
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-0.43%/K
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Intensity Dependence
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Intensity(w/㎡)
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Isc（mA）
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Voc(mV)
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1000
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1.00
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1.000
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900
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0.90
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0.996
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500
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0.50
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0.968
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300
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0.30
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0.942
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200
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0.20
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0.920
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Calibrated under AM1.5 global SRC in Fraunhofer ISE
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Ratio of Voc(Isc)at reduced intensity to Voc(Isc)at 1000W/㎡
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| Electrical Characteristics |
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Efficiency(%) |
Pmpp(W) |
Umpp(V) |
Impp(A) |
Uoc(V) |
Isc(A) |
FF(%) |
|
20.00 |
4.89 |
0.549 |
8.93 |
0.642 |
9.43 |
81.94 |
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19.90 |
4.86 |
0.547 |
8.92 |
0.642 |
9.42 |
80.69 |
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19.80 |
4.84 |
0.545 |
8.90 |
0.641 |
9.41 |
80.56 |
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19.70 |
4.81 |
0.544 |
8.88 |
0.640 |
9.39 |
80.46 |
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19.60 |
4.79 |
0.543 |
8.85 |
0.639 |
9.36 |
80.38 |
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19.50 |
4.76 |
0.540 |
8.84 |
0.637 |
9.35 |
80.25 |
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19.40 |
4.74 |
0.538 |
8.82 |
0.636 |
9.34 |
79.95 |