Monocrystallion Silicon Cell(4BB)
|
Mechanical Data And Design
|
Format
|
156.75mm x 156.75mm ±0.5mm
|
Thickness(wafer)
|
200μm±20μm
|
Front(-)
|
1.0mm bus bars(silver),blue anti-reflection coating(silicon nitride)
|
Back(+)
|
2.0mm wide soldering pads(silver)back surface field(aluminium)
|
|
Temperature Coefficients
|
TkVotlage
|
-0.33%/K
|
TkCurrent
|
+0.048%/K
|
TkPower
|
-0.43%/K
|
|
Intensity Dependence
|
Intensity(w/㎡)
|
Isc(mA)
|
Voc(mV)
|
1000
|
1.00
|
1.000
|
900
|
0.90
|
0.996
|
500
|
0.50
|
0.968
|
300
|
0.30
|
0.942
|
200
|
0.20
|
0.920
|
|
Calibrated under AM1.5 global SRC in Fraunhofer ISE
|
Ratio of Voc(Isc)at reduced intensity to Voc(Isc)at 1000W/㎡
|
Electrical Characteristics |
Efficiency(%) |
Pmpp(W) |
Umpp(V) |
Impp(A) |
Uoc(V) |
Isc(A) |
FF(%) |
20.00 |
4.89 |
0.549 |
8.93 |
0.642 |
9.43 |
81.94 |
19.90 |
4.86 |
0.547 |
8.92 |
0.642 |
9.42 |
80.69 |
19.80 |
4.84 |
0.545 |
8.90 |
0.641 |
9.41 |
80.56 |
19.70 |
4.81 |
0.544 |
8.88 |
0.640 |
9.39 |
80.46 |
19.60 |
4.79 |
0.543 |
8.85 |
0.639 |
9.36 |
80.38 |
19.50 |
4.76 |
0.540 |
8.84 |
0.637 |
9.35 |
80.25 |
19.40 |
4.74 |
0.538 |
8.82 |
0.636 |
9.34 |
79.95 |