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Polycristallin Silicon Cell(4BB)
Mechanical Data And Design
Format 156mm x 156mm ±0.5mm
Thickness(wafer) 200μm±20μm
Front(-) 1.0±0.05mm bus bars(silver),blue anti-reflection coating(silicon nitride)
Back(+) 2.0±0.05mm wide soldering pads(silver)back surface field(aluminium)
Temperature Coefficients
TkVotlage -0.33%/K
TkCurrent +0.06%/K
TkPower -0.43%/K
Intensity Dependence
Intensity(w/㎡) Isc(mA) Voc(mV)
1000 1.00 1.000
900 0.90 0.996
500 0.50 0.968
300 0.30 0.942
200 0.20 0.920
Calibrated under AM1.5 global SRC in Fraunhofer ISE Ratio of Voc(Isc)at reduced intensity to Voc(Isc)at 1000W/㎡
Electrical Characteristics
Efficiency(%) Pmpp(W) Umpp(V) Impp(A) Uoc(V) Isc(A) FF(%)
>18.6 4.53 0.538 8.39 0.635 8.93 79.60
18.40-18.60 4.48 0.536 8.37 0.634 8.91 79.42
18.20-18.40 4.43 0.535 8.36 0.633 8.91 79.30
18.00-18.20 4.38 0.534 8.35 0.633 8.89 78.24
17.80-18.00 4.33 0.531 8.34 0.631 8.88 79.03
17.60-17.80 4.28 0.529 8.33 0.630 8.86 78.95
17.40-17.60 4.23 0.527 8.31 0.630 8.84 78.64
17.20-17.40 4.19 0.524 8.27 0.628 8.81 78.33
17.00-17.20 4.14 0.520 8.24 0.625 8.77 78.17
16.80-17.00 4.09 0.517 8.19 0.622 8.72 78.07